triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 5, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 16 18 20 22 24 26 28 32 34 36 38 40 42 44 46 48 frequency (ghz) output power (dbm) -20 -15 -10 -5 0 5 10 15 20 32 34 36 38 40 42 44 46 48 frequency (ghz) s-parameter (db) 32 - 47 ghz wide band driver amplifier TGA4521-EPU key features ? frequency range: 32 - 47 ghz ? 24 dbm nominal psat @ 38 ghz ? 23 dbm p1db @ 38 ghz ? 15 db nominal gain @ 38 ghz ? 32 dbm otoi @ 16dbm/tone ? bias: 5-6 v @ 200 ma idq ? 0.25 um 3mi phemt technology ? chip dimensions 1.60 x 0.75 x 0.10 mm (0.063 x 0.030 x 0.004 in) primary applications ? digital radio ? point-to-point radio ? point-to-multipoint communications ? military sat-com measured fixtured data bias conditions: vd = 6 v, idq = 200 ma psat p1db product description the triquint TGA4521-EPU is a compact driver amplifier mmic for ka-band and q-band applications. the part is designed using triquints proven standard 0.25um power phemt production process. the TGA4521-EPU nominally provides 24 dbm saturated output power, and 23 dbm output power at 1db gain compression @ 38 ghz. it also has typical gain of 15 db. the part is ideally suited for low cost emerging markets such as digital radio, point-to-point radio and point-to-multi point communications. the TGA4521-EPU is 100% dc and rf tested on- wafer to ensure performance compliance. gain irl orl
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 5, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice table i maximum ratings 1/ symbol parameter value notes vd drain voltage 8 v 2/ vg gate voltage range -2 to 0 v id drain current 350 ma 2/ 3 / ? ig ? gate current 9 ma 3/ p in input continuous wave power 20 dbm p d power dissipation see note 4/ 2/ t ch operating channel temperature 150 0 c5/ 6 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ total current for the entire mmic. 4/ for a median life time of 1e+6 hrs, power dissipation is limited to: p d (max) = (150 0 c C t base 0 c) / 70 ( 0 c/w) where t base is the base plate temperature. 5/ junction operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ these ratings apply to each individual fet. TGA4521-EPU
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 5, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice table ii electrical characteristics (ta = 25 0 c nominal) TGA4521-EPU parameter typical units frequency range 33 - 47 ghz drain voltage, vd 6.0 v drain current, id 200 ma gate voltage, vg -0.5 v small signal gain, s21 12 db input return loss, s11 7 db output return loss, s22 7 db output power @ 1db gain compression, p1db 23 dbm saturated power, psat 25 dbm table iii thermal information parameter test conditions t ch ( o c) r t jc ( q c/w) t m (hrs) r q jc thermal resistance (channel to case) vd = 5 v id = 200 ma pdiss = 1.0 w 140 70 2.4e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 o c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated.
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 5, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice -20 -15 -10 -5 0 5 10 15 20 30 32 34 36 38 40 42 44 46 48 50 frequency (ghz) return loss (db) 0 2 4 6 8 10 12 14 16 18 20 30 32 34 36 38 40 42 44 46 48 50 frequency (ghz) gain (db) TGA4521-EPU preliminary measured data bias conditions: vd = 5 - 6 v, idq = 200 ma 6v 5v bias conditions: vd = 6 v, idq = 200 ma orl irl
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 5, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 16 17 18 19 20 21 22 23 24 25 26 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 fr e que nc y ( ghz ) p1db (dbm) vd=6v vd=5v vd=4v TGA4521-EPU preliminary measured data bias conditions: vd = 4 - 6 v, idq = 200 ma 16 17 18 19 20 21 22 23 24 25 26 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 frequency (ghz) psat (dbm) vd=6v vd=5v vd=4v
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 5, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 6 8 10 12 14 16 18 20 22 24 26 -8 -6 -4 -2 0 2 4 6 8 1012141618 pin (dbm) pout (dbm) & gain (db) 0 50 100 150 200 250 300 350 400 450 500 id (ma) pout gain id 6 8 10 12 14 16 18 20 22 24 26 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 pin (dbm) pout (dbm) & gain (db) 0 50 100 150 200 250 300 350 400 450 500 id (ma) pout gain id TGA4521-EPU preliminary measured data bias conditions: vd = 5v, idq = 200 ma, freq = 38 ghz bias conditions: vd = 6 v, idq = 200 ma, freq = 38 ghz
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 5, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGA4521-EPU 26 27 28 29 30 31 32 33 34 35 36 35.0 35.5 36.0 36.5 37.0 37.5 38.0 38.5 39.0 39.5 40.0 frequency (ghz) otoi (dbm) & imd3 (dbc) imd3@16dbm/tone otoi@ 16dbm/tone preliminary measured data bias conditions: vd = 6 v, idq = 200 ma, f=10mhz 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 output power / tone (dbm) imd3 (dbc) 37ghz 38ghz 39ghz 40ghz
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 5, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice mechanical drawing TGA4521-EPU gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. ne units: millimeters (inches) thickness: 0.100 (0.004) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) gnd is back side of mmic bond pad #1 bond pad #2 bond pad #3, 9 bond pad #4, 5, 7 bond pad #6 (rf in) (n/c) (vg) (vd) (n/c) 0.100 x 0.120 0.081 x 0.100 0.108 x 0.108 0.108 x 0.108 0.091 x 0.084 bond pad #8 (rf out) 0.100 x 0.120 (0.004 x 0.005) (0.003 x 0.004) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.003) (0.004 x 0.005) 1 2 3 4 5 6 7 8 9 0 0 0.113 (0.004) 0.793 (0.031) 1.485 (0.058) 1.599 (0.063) 0.217 (0.009) 0.651 (0.026) 1.490 (0.059) 1.316 (0.052) 1.167 (0.046) 0.346 (0.014) 0.267 (0.011) 0.086 (0.003) 0.750 (0.030) 0.651 (0.026) 0.353 (0.014) rc rc b b
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 5, 2004 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice recommended chip assembly diagram TGA4521-EPU gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. bias conditions: vd = 4 - 6 v vg = ~ -0.5 v to get 200ma id 100pf 100pf 100pf 0.01 f vg (alternative vg) vd 1.0 f 15 0.01 f 1.0 f 1.0 f 15 0.01 f tfn (10mil alumina) 180 x 200um pad vg 15 tfn (10mil alumina) 450um 180um
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 5, 2004 10 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4521-EPU reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 0 c (30 seconds max). an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. maximum stage temperature is 200 0 c.
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